• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A groove 32A is provided inside the column 32 of the quartz boat 3 so as to have an angle of 0 ° to 10 ° (80 ° to 90 ° for the horizontal direction) with respect to the vertical direction of the horizontal plane. By inserting and supporting the semiconductor substrate 2 in the groove 32A, the in-plane uniformity of the impurity concentration is improved, thereby improving the productivity of the semiconductor device.
    公开号:KR19990068233A
    申请号:KR1019990003163
    申请日:1999-01-30
    公开日:1999-08-25
    发明作者:이데시게아키
    申请人:가네꼬 히사시；닛본 덴기 가부시끼가이샤；
    IPC主号:
    专利说明:

    IMPURITY DIFFUSION PROCESS FOR SEMICONDUCTOR WAFER AND EQUIPMENT FOR MANUFACTURING SEMICONDUCTOR WAFER}
    BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an impurity diffusion treatment method and a semiconductor manufacturing apparatus of a semiconductor substrate, and more particularly, to an impurity diffusion treatment method and a semiconductor substrate for improving productivity as a semiconductor device by improving in-plane uniformity of impurity concentration. It relates to a manufacturing apparatus.
    Conventionally, there is a semiconductor manufacturing apparatus that uses a vertical diffusion furnace to perform an impurity diffusion treatment on a surface of a semiconductor substrate.
    4 and 5 show this semiconductor manufacturing apparatus, FIG. 4 is a schematic sectional view thereof, and FIG. 5 is a top view thereof. As shown in Figs. 4 and 5, the semiconductor manufacturing apparatus includes a core tube 1 for diffusing a impurities such as phosphorus and a quartz boat for supporting the semiconductor substrate 2 in the core tube 1 ( 3), an impurity source container 4 for storing an impurity source (POCl 3, etc.), which is a source of generation of impurities, and a mass flow controller for controlling the flow rate of nitrogen gas supplied into the impurity source container 4 (hereinafter, 5), a gas injector 6 for supplying the impurity source stored in the impurity source container 4 into the core tube 1 as an impurity gas, and an additional gas such as oxygen and nitrogen. It consists of the gas supply pipe 7 for supplying in (1), and the heater 8 for heating the inside of the core pipe 1 to predetermined temperature.
    In the above configuration, the semiconductor substrate 2 is horizontally supported by the quartz boat 3, and the gas injector 6 is provided with a plurality of gas inlets 6A side by side in the longitudinal direction, and the core pipe 1 The gas is blown out horizontally toward the center of the core tube 1 evenly in the longitudinal direction of the core.
    In this semiconductor manufacturing apparatus, the diffusion treatment of impurities on the surface of the semiconductor substrate is performed as follows.
    First, a plurality of (100 to 200) semiconductor substrates 2 are mounted on the quartz boat 3 mounted horizontally with respect to the direction of the gas inlet 6A of the gas injector 6 by a heater 8. It is inserted in the core pipe 1 heated at high temperature by temperature, and it rotates by predetermined rotation speed.
    Next, nitrogen is blown into the impurity source container 4 by the MFC 5 to vaporize the impurity source, and the vaporized impurity gas is supplied into the core tube 1 through the gas injector 6. At the same time, via gas supply pipe 7 additional gas such as oxygen and nitrogen is supplied into core pipe 1. The injected oxygen reacts with the impurity gas on the surface of the semiconductor substrate 2, and a glass layer containing impurities such as an inglass layer is formed on the semiconductor substrate 2, for example.
    Thereafter, impurities in the glass layer diffuse into the semiconductor substrate 2 by thermal diffusion. In this way, the diffusion treatment of impurities is performed.
    However, according to the conventional semiconductor manufacturing apparatus, there is a problem that the concentration is lowered at the center portion and the in-plane uniformity of the impurity concentration is deteriorated compared to the impurity concentration diffused at the peripheral portion of the semiconductor substrate.
    That is, the periphery of the semiconductor substrate is usually rotated close to the inlet of the impurity gas, whereas the center portion of the semiconductor substrate is processed at a distance far from the inlet of the impurity gas as it corresponds to the radius thereof. As a result, the impurity concentration becomes nonuniform at the periphery and the center of the semiconductor substrate.
    Referring to FIG. 5, in the case of a 6-inch semiconductor substrate, the distance from the injection hole at the outermost periphery and the center has a difference of 75 mm. In this case, the impurity gas such as phosphate (POCl 3 ), which is different from oxygen or nitrogen, has a large atomic weight, so that the average free process is small and the number of molecules reached as the distance increases. That is, in the periphery of the semiconductor substrate rotating at a close distance from the inlet of the impurity gas, since sufficient impurity molecules are present, sufficient phosphorus diffusion proceeds, whereas the amount of impurity molecules in the center part far from the inlet is reduced. The diffusion of phosphorus will not be sufficient.
    As such, when the in-plane uniformity of the impurity concentration is lowered, the transistor characteristics of the semiconductor manufacturing apparatus manufactured through this step are different in-plane, and as a result, the productivity as a semiconductor device is deteriorated.
    It is therefore an object of the present invention to provide an impurity diffusion treatment method and a semiconductor manufacturing apparatus of a semiconductor substrate which can improve the productivity of the semiconductor device by improving the in-plane uniformity of impurity concentration.
    1 is a cross-sectional view of a semiconductor manufacturing apparatus according to an embodiment of the present invention;
    2 is a plan view of a semiconductor manufacturing apparatus according to an embodiment of the present invention;
    3 is a partial perspective enlarged view of FIG. 1;
    4 is a cross-sectional view of a conventional semiconductor manufacturing apparatus;
    5 is a top view of a conventional semiconductor manufacturing apparatus.
    ※ Explanation of code for main part of drawing
    1: core tube 2: semiconductor substrate
    3: quartz boat 4: impurity source container
    5: Mass Flow Controller (MFC)
    6: gas injector 6A: gas inlet
    7: gas supply pipe 8: heater
    In order to achieve the above object, the present invention provides an impurity diffusion treatment method for a semiconductor substrate in which impurities are diffused in the semiconductor substrate by supplying an impurity gas into a diffusion path in which the semiconductor substrate is accommodated. When the distance between the center of the electrode and the supply port of the impurity gas is shortest, the semiconductor substrate is supported in a state where the minimum value of the angle formed in the direction perpendicular to the plane and the direction in which the impurity gas is supplied into the diffusion path becomes a predetermined value. An impurity diffusion treatment method for a semiconductor substrate is characterized by rotating the semiconductor substrate in a diffusion furnace.
    Also, in order to achieve the above object, in the impurity diffusion treatment method of a semiconductor substrate in which an impurity gas is supplied into a diffusion path in which the semiconductor substrate is accommodated to diffuse impurities in the semiconductor substrate, the semiconductor substrate is rotated. The semiconductor substrate is impurity diffusion processing method characterized in that the semiconductor substrate is supported in a state where the minimum value of the angle formed by the radial direction from the center of the semiconductor substrate and the vertical line of the surface on which the impurities are diffused from the semiconductor becomes a predetermined value. .
    In this case, the predetermined value is preferably between about 0 to 10.
    Furthermore, in order to achieve the above object, the present invention provides a semiconductor manufacturing apparatus comprising a diffusion path in which a semiconductor substrate is housed and a gas supply means for supplying impurity gas from a supply port provided in the diffusion path. In the case where the distance between the center of the surface to which impurities are diffused and the supply hole is shortest, the semiconductor substrate is supported with a predetermined value such that the minimum value of the angle formed in the vertical line of the surface and the direction in which the impurity gas is supplied into the diffusion path becomes a predetermined value. To provide a semiconductor manufacturing apparatus characterized in that it has a supporting means and a rotating means for rotating the semiconductor substrate supported by the supporting means.
    Furthermore, in order to achieve the above object, the present invention also provides a semiconductor manufacturing apparatus comprising a diffusion path in which a semiconductor substrate is housed and a gas supply means for supplying impurity gas from a supply port provided in the diffusion path. Support means for supporting the semiconductor substrate in a state in which the minimum value of the angle formed by the radial direction from the center when the substrate is rotated and the vertical line of the surface on which the impurities are diffused in the semiconductor substrate becomes a predetermined value; It is to provide a semiconductor manufacturing apparatus characterized by having a rotating means for rotating a semiconductor substrate supported by the means.
    In the above configuration, the predetermined value is preferably between about 0 to 10, and the supporting means is preferably made of a material such as quartz, silicon carbide, or polycrystalline silicon, and the supporting means is at least one pair of sets. The structure which supports a semiconductor substrate by the groove | channel provided toward the side is preferable.
    EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described in detail, referring drawings.
    1 to 3 show a semiconductor manufacturing apparatus according to an embodiment of the present invention, in which FIG. 1 is a sectional view thereof, FIG. 2 is a plan view thereof, and FIG. 3 is a partially enlarged view of FIG. 1.
    Since the same reference numerals are given to the same elements as those in Figs. 4 and 5, overlapping explanations are omitted. However, in the present embodiment, the semiconductor substrate 2 is mounted almost vertically on the quartz boat 3 to be loaded. Is different from the semiconductor manufacturing apparatus.
    That is, as shown in Fig. 3, in the quartz boat 3, grooves 31A for supporting the semiconductor substrate 2 from below are provided in the upper portion of the beam portion 31, and the semiconductor substrate 2 is removed from the side portion. The groove 32A to support is provided in the inside of the pillar part 32. As shown in FIG. The groove 32A provided on the inner side of the column 32 has an angle of 0 ° to 10 ° (80 ° to 90 ° in the horizontal direction) (absolute value expression from 0 to 90) with respect to the vertical direction of the horizontal plane. It is provided so that the semiconductor substrate 2 can be inclined so that it can be easily loaded and taken out in the upward direction. Moreover, the quartz boat 3 is raised and lowered by an elevator (not shown), and the elevator has a rotating mechanism for processing while rotating the quartz boat 3.
    Based on the above configuration, the diffusion process of impurities on the surface of the semiconductor substrate by the semiconductor manufacturing apparatus according to the embodiment of the present invention is performed as follows.
    First, a plurality of semiconductor substrates 2 (3 to 8 x 3 to 20 stages in one stage of the quartz boat) are mounted on the quartz boat 3 to be loaded. That is, the semiconductor substrate 2 is inserted into the groove 32A of the pillar portion 32 of the quartz boat 3, and the semiconductor substrate 2 is supported by the groove 31A of the beam portion 31. . This standing and loaded quartz boat 3 is inserted into the core pipe 1 heated at a high temperature at a predetermined temperature (800 ° C to 1000 ° C), and rotated at a rotational speed of 1 to 10 rpm.
    Next, nitrogen gas at a predetermined flow rate (1 to 5 L / min) is injected into the MFC 5 into the impurity source container 4 to generate an impurity gas. The generated impurity gas is supplied into the core pipe 1 through the gas injector 6.
    At this time, as described above, the semiconductor substrate 2 is mounted upright on the quartz boat 3, and the surfaces of all the semiconductor substrates 2 are generally rotated toward the outer side (in the direction of the inlet 6A of impurity gas). Therefore, the distance from the gas inlet 6A of the impurity gas is also substantially equal to the periphery and the center of the surface of the semiconductor substrate 2, and the impurity gas is uniformly supplied. For example, in the case of processing the semiconductor substrate 2 having a diameter of 150 mm, in the case of FIG. 5, the distance from each injection hole 6A of the outermost peripheral portion and the central portion of the semiconductor substrate 2 has a 75 mm difference. As shown in FIG. 2, when loaded vertically as in this embodiment, as shown in FIG. 2, the difference between the outermost circumference and the center of the semiconductor substrate 2 as viewed from the center of rotation is It is small by 31mm. Increasing the number of charges per stage makes the difference smaller.
    In the core tube 1, an adduct such as oxygen (0.1 to 5 L / min), nitrogen (5 to 30 L / min) or the like is supplied through the gas supply pipe 7 to form an impurity gas and impurities on the surface of the semiconductor substrate 2. By reacting, a glass layer containing impurities such as in glass is formed on the surface of the semiconductor substrate 2, and impurities are diffused in the semiconductor substrate 2 by subsequent heat treatment. Impurities diffused in the semiconductor substrate 2 are activated by subsequent heat treatment, and contribute to electron conduction as N-type impurities (donors).
    In the case of the diffusion treatment of impurities in the vertical diffusion furnace, it is necessary to prevent diffusion of impurities (metals or alkali ions, etc.) other than the target impurities in the semiconductor substrate. For this purpose, in this embodiment, the semiconductor substrate is supported with a simple structure using a high-purity quartz boat without using a complicated mechanism such as a clamp. Examples of the material that can replace the quartz boat include silicon carbide or polycrystalline silicon of high purity.
    As described above, according to the impurity diffusion treatment method and semiconductor manufacturing apparatus of the semiconductor substrate of the present invention, since impurities are uniformly supplied to the surface of the semiconductor substrate, the diffusion of impurities occurs uniformly in the plane, and the impurity concentration in-plane uniformity. Sex is improved.
    For this reason, the in-plane uniformity of the transistor characteristics of the semiconductor device produced by performing the impurity diffusion treatment according to the present invention is improved. As a result, the productivity of the semiconductor device is improved.
    权利要求:
    Claims (8)
    [1" claim-type="Currently amended] In the impurity diffusion treatment method of a semiconductor substrate to supply an impurity gas into a diffusion path in which a semiconductor substrate is accommodated to diffuse impurities in the semiconductor substrate,
    The minimum value of the angle formed in the direction in which the vertical line of the surface and the impurity gas are supplied into the diffusion path when the distance between the center of the surface where the impurity diffuses the semiconductor substrate and the supply region of the impurity gas becomes the shortest is the shortest. Is supported by the semiconductor substrate in a state where
    Impurity diffusion treatment method for a semiconductor substrate, characterized in that the semiconductor substrate is rotated in the diffusion furnace.
    [2" claim-type="Currently amended] In the impurity diffusion treatment method of a semiconductor substrate to supply an impurity gas into a diffusion path in which a semiconductor substrate is accommodated to diffuse impurities in the semiconductor substrate,
    And supporting the semiconductor substrate in a state in which a minimum value of an angle formed by a radial direction from the center when the semiconductor substrate is rotated and an angle formed by a vertical line of a surface on which the impurities are diffused from the semiconductor substrate becomes a predetermined value. Impurity diffusion treatment method.
    [3" claim-type="Currently amended] The impurity diffusion treatment method of a semiconductor substrate according to claim 1 or 2, wherein the predetermined value is between 0 and 10.
    [4" claim-type="Currently amended] A semiconductor manufacturing apparatus comprising a diffusion path containing a semiconductor substrate and a gas supply means for supplying impurity gas from a supply port provided in the diffusion path,
    When the distance between the center of the surface on which the impurities are diffused of the semiconductor substrate is diffused and the supply port is the shortest, the minimum value of the angle formed in the direction in which the vertical line of the surface and the impurity gas is supplied into the diffusion path is equal to a predetermined value. Support means for supporting the semiconductor substrate in a state of being;
    And a rotating means for rotating the semiconductor substrate supported by the holding means.
    [5" claim-type="Currently amended] A semiconductor manufacturing apparatus comprising a diffusion path containing a semiconductor substrate and a gas supply means for supplying impurity gas from a supply port provided in the diffusion path,
    Supporting means for supporting the semiconductor substrate in a state in which a minimum value of an angle formed by a radial direction from the center when the semiconductor substrate is rotated and a vertical line of a surface on which the impurities are diffused in the semiconductor substrate becomes a predetermined value;
    And a rotation means for rotating the semiconductor substrate supported by the support means while maintaining the center.
    [6" claim-type="Currently amended] The semiconductor manufacturing apparatus according to claim 4 or 5, wherein the predetermined value is between 0 and 10.
    [7" claim-type="Currently amended] 7. The semiconductor manufacturing apparatus according to any one of claims 4 to 6, wherein the supporting means is made of a material such as quartz, silicon carbide, or polycrystalline silicon.
    [8" claim-type="Currently amended] 8. The semiconductor manufacturing apparatus according to any one of claims 4 to 7, wherein the support means supports the semiconductor substrate by at least one pair of opposed grooves.
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    同族专利:
    公开号 | 公开日
    JP2928210B1|1999-08-03|
    US20010055865A1|2001-12-27|
    JPH11219913A|1999-08-10|
    KR100323580B1|2002-02-19|
    US6348397B2|2002-02-19|
    US20020042190A1|2002-04-11|
    US6506256B2|2003-01-14|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1998-01-30|Priority to JP10019928A
    1998-01-30|Priority to JP10-019928
    1999-01-30|Application filed by 가네꼬 히사시, 닛본 덴기 가부시끼가이샤
    1999-08-25|Publication of KR19990068233A
    2002-02-19|Application granted
    2002-02-19|Publication of KR100323580B1
    优先权:
    申请号 | 申请日 | 专利标题
    JP10019928A|JP2928210B1|1998-01-30|1998-01-30|Semiconductor substrate impurity diffusion treatment method and semiconductor manufacturing apparatus|
    JP10-019928|1998-01-30|
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